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METAL NOA SYSTEM ALD
METAL NOA SYSTEM ALD NOA拥有独特的特点，可以集成不同种类金属薄膜的淀积 工艺和独立加工。根据客户的不同需求，NOA可以扩展其平台，满足不同需求， 并将不同种类金属薄膜的淀积工艺（如TiTiN/W）和清洁工艺放置在一个简单 的系统设备里。使FAB厂降低成本为制造商节省空间 ALD TiN/W （应用于淀积ALD TiN/W金属薄膜 )
Process
- Ti/ALD–TiN
- ALD-TiN
- ALD-W
- TOT (TiN/Ox/TiN)
Applications
- Capacitor
- Worldline
- Plugs
- Metal contact
- MG
Introduction.
NOA has its one and only unique feature that can integrate different metal processes andstand-alone process. Depending on users, NOA can extend its platform for different needs,which could be integrated different processes like Ti/TiN, Tungsten, and Clean steps intoone single system. This allows less FAB costs and space savings for manufacturers.
Since technologies move to smaller technology nodes, it can be very difficult to completelyfill narrow contacts, vias, plugs and word lines. The NOA can provide solution for ALD-tungsten process which provides excellent gap-fill ability with very low fluorine content and lowresistivity compared to pre-existing tungsten processes.
Technology.
NOA SYSTEM deposits Tungsten film which is used for conductive features like contacts,vias, and plugs on a chip and it is also possible to form TiN(Capacitor Electrode for DRAM)and TiN(Contact barrier metal for DRAM/Logic/3D NAND). As device nodes scale down, conventional CVD Film deposition is limited. NOA system enables integrated metal processes.
Features.
1. Able to Configure In-line Process Modules For Optimum Integration
2. Higher UPEH with Smaller Footprint (6 to 10 Process Modules)
3. Excellent Reliability ALD
4. Excellent Step Coverage (> 95%)
5. Excellent Gap Fill Performance
6. Uniformity Unif (ALD TiN < 1%)
7. Low Cl Content (ALD TiN < 0.5at%)
8. Low F Content (LFW <5.0E17atoms/cc )
